DMN3032LFDBWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V U-DFN2020-
$0.32
Available to order
Reference Price (USD)
1+
$0.31996
500+
$0.3167604
1000+
$0.3135608
1500+
$0.3103612
2000+
$0.3071616
2500+
$0.303962
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN3032LFDBWQ-7 by Diodes Incorporated is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the DMN3032LFDBWQ-7 offers superior functionality and longevity. Trust Diodes Incorporated to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: -
Related Products
Microchip Technology
MSCSM170HM45CT3AG
onsemi
NXH010P90MNF1PTG
Microchip Technology
APTC60HM70BT3G
Sanyo
STMFS4854NST1G
Renesas Electronics America Inc
FS50KM-2-J2#E52
Harris Corporation
SK3065
Harris Corporation
IRF712S2497
Microchip Technology
APTM10DUM02G
Diodes Incorporated
DMT4015LDV-13
Microchip Technology