DMN3061LCA3-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V X4-DSN1006
$0.14
Available to order
Reference Price (USD)
1+
$0.13755
500+
$0.1361745
1000+
$0.134799
1500+
$0.1334235
2000+
$0.132048
2500+
$0.1306725
Exquisite packaging
Discount
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Enhance your electronic projects with the DMN3061LCA3-7 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMN3061LCA3-7 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Vgs (Max): 12V
- Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.12W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X4-DSN1006-3 (Type C)
- Package / Case: 3-XFDFN
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