IPA029N06NM5SXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 87A TO220
$1.09
Available to order
Reference Price (USD)
1+
$1.09022
500+
$1.0793178
1000+
$1.0684156
1500+
$1.0575134
2000+
$1.0466112
2500+
$1.035709
Exquisite packaging
Discount
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Meet the IPA029N06NM5SXKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPA029N06NM5SXKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 87A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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