DMN3061SW-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT323 T&R
$0.08
Available to order
Reference Price (USD)
1+
$0.08272
500+
$0.0818928
1000+
$0.0810656
1500+
$0.0802384
2000+
$0.0794112
2500+
$0.078584
Exquisite packaging
Discount
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The DMN3061SW-7 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMN3061SW-7 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 490mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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