DMN31D6UT-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 350MA SOT523
$0.06
Available to order
Reference Price (USD)
3,000+
$0.06143
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the DMN31D6UT-7 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMN31D6UT-7 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 320mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
Related Products
Microchip Technology
MSC400SMA330B4
Fairchild Semiconductor
SI4463DY
Rohm Semiconductor
R6024KNXC7G
Harris Corporation
RF1S45N06SM
Infineon Technologies
IPA126N10NM3SXKSA1
Renesas Electronics America Inc
FS50KMJ-06F#B00
Toshiba Semiconductor and Storage
TPW1500CNH,L1Q
Harris Corporation
RF1S50N06LESM
Renesas
HAT1093C-EL-E
Infineon Technologies