R6024KNXC7G
Rohm Semiconductor
Rohm Semiconductor
600V 24A TO-220FM, HIGH-SPEED SW
$5.85
Available to order
Reference Price (USD)
1+
$5.85000
500+
$5.7915
1000+
$5.733
1500+
$5.6745
2000+
$5.616
2500+
$5.5575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R6024KNXC7G by Rohm Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the R6024KNXC7G is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Harris Corporation
RF1S45N06SM
Infineon Technologies
IPA126N10NM3SXKSA1
Renesas Electronics America Inc
FS50KMJ-06F#B00
Toshiba Semiconductor and Storage
TPW1500CNH,L1Q
Harris Corporation
RF1S50N06LESM
Renesas
HAT1093C-EL-E
Infineon Technologies
IRL8114PBF
Infineon Technologies
SPB160N04S2-03
Diodes Incorporated
DMP2006UFGQ-7
Diodes Incorporated