DMN4040SK3Q-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V~40V TO252 T&R
$0.21
Available to order
Reference Price (USD)
1+
$0.20579
500+
$0.2037321
1000+
$0.2016742
1500+
$0.1996163
2000+
$0.1975584
2500+
$0.1955005
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the DMN4040SK3Q-13 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMN4040SK3Q-13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.71W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIHD5N80AE-GE3
Rohm Semiconductor
RTQ025P02HZGTR
Panjit International Inc.
PJE8401_R1_00001
Vishay Siliconix
SI7112DN-T1-GE3
Infineon Technologies
AUIRFR120ZTRL
STMicroelectronics
STB15N80K5
Diodes Incorporated
DMP3015LSS-13
STMicroelectronics
STB18N65M5
Infineon Technologies
IPB60R280P7ATMA1
Rohm Semiconductor