IPB60R280P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 12A D2PAK
$2.97
Available to order
Reference Price (USD)
1,000+
$1.07168
2,000+
$0.99777
5,000+
$0.96082
10,000+
$0.94066
Exquisite packaging
Discount
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The IPB60R280P7ATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPB60R280P7ATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 190µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Infineon Technologies