DMN4800LSSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 8.6A 8SO
$0.58
Available to order
Reference Price (USD)
2,500+
$0.21908
5,000+
$0.20643
12,500+
$0.19378
25,000+
$0.18492
Exquisite packaging
Discount
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The DMN4800LSSQ-13 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.46W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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