DMN6070SY-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 4.1A SOT89-3
$0.14
Available to order
Reference Price (USD)
2,500+
$0.15112
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN6070SY-13 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMN6070SY-13 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
Related Products
Diodes Incorporated
DMT12H007SPS-13
Renesas Electronics America Inc
RJK6024DPD-00#J2
Rohm Semiconductor
RS1L151ATTB1
Micro Commercial Co
MCB200N06YA-TP
Renesas Electronics America Inc
RJK0379DPA-00#J53
STMicroelectronics
SCTH60N120G2-7
Diodes Incorporated
DMP2021UTSQ-13
Transphorm
TP65H050G4BS
Vishay Siliconix
SQJ146EP-T1_GE3
Diodes Incorporated