DMN61D8LQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 470MA SOT23
$0.51
Available to order
Reference Price (USD)
1+
$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
Discount
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Meet the DMN61D8LQ-7 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMN61D8LQ-7 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 390mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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