DMN66D0LW-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT323
$0.46
Available to order
Reference Price (USD)
3,000+
$0.17145
6,000+
$0.16155
15,000+
$0.15165
30,000+
$0.14472
75,000+
$0.14400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN66D0LW-7 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMN66D0LW-7 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
onsemi
NTD4808N-35G
STMicroelectronics
STP60NF10
Infineon Technologies
BF2040RE6814
onsemi
FDD7N60NZTM
Infineon Technologies
IPP80N06S4L07AKSA2
onsemi
FDS3512
Nexperia USA Inc.
BUK7905-40AIE,127
Toshiba Semiconductor and Storage
TK16J60W5,S1VQ
Vishay Siliconix
IRFR9024TRPBF-BE3
Vishay Siliconix