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FDS3512

onsemi
FDS3512 Preview
onsemi
MOSFET N-CH 80V 4A 8SOIC
$2.86
Available to order
Reference Price (USD)
2,500+
$1.02510
5,000+
$0.98713
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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