DMNH10H028SCT
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 60A TO220AB
$1.60
Available to order
Reference Price (USD)
1+
$1.70000
50+
$1.37760
100+
$1.21590
500+
$0.96180
1,000+
$0.77700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMNH10H028SCT from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMNH10H028SCT offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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