DMNH4011SPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V PWRDI5060
$1.07
Available to order
Reference Price (USD)
2,500+
$0.48720
5,000+
$0.46564
12,500+
$0.45024
25,000+
$0.44800
Exquisite packaging
Discount
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Optimize your power electronics with the DMNH4011SPSQ-13 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMNH4011SPSQ-13 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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