DMNH6069SFVWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI333
$0.24
Available to order
Reference Price (USD)
1+
$0.23870
500+
$0.236313
1000+
$0.233926
1500+
$0.231539
2000+
$0.229152
2500+
$0.226765
Exquisite packaging
Discount
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Enhance your electronic projects with the DMNH6069SFVWQ-7 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMNH6069SFVWQ-7 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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