RF1S530SM9A
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.88
Available to order
Reference Price (USD)
1+
$0.88000
500+
$0.8712
1000+
$0.8624
1500+
$0.8536
2000+
$0.8448
2500+
$0.836
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RF1S530SM9A by Fairchild Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the RF1S530SM9A is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 8.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
UnitedSiC
UF4C120070K3S
Diodes Incorporated
DMT10H009SCG-13
Diodes Incorporated
DMT8030LFDF-13
Renesas Electronics America Inc
RJK03K0DPA-00#J5A
Diodes Incorporated
DMTH4007SPSQ-13
Goford Semiconductor
GT110N06S
Toshiba Semiconductor and Storage
2SK3798(STA4,Q,M)
Diodes Incorporated
DMP1011LFVQ-7
Infineon Technologies
IPF023N08NF2SATMA1
STMicroelectronics