DMP2069UFY4Q-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-DFN2015-
$0.17
Available to order
Reference Price (USD)
1+
$0.16897
500+
$0.1672803
1000+
$0.1655906
1500+
$0.1639009
2000+
$0.1622112
2500+
$0.1605215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMP2069UFY4Q-7 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMP2069UFY4Q-7 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 530mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2015-3
- Package / Case: 3-XDFN
Related Products
Diodes Incorporated
DMT10H9M9SCT
Rohm Semiconductor
RW4E075AJTCL1
Diodes Incorporated
DMTH6005LPSQ-13
Harris Corporation
RFG30P05
Diodes Incorporated
DMP3045LFVWQ-13
Toshiba Semiconductor and Storage
SSM6K810R,LF
Infineon Technologies
AIMW120R060M1HXKSA1
onsemi
NTMFS4C09NBT1G
Diodes Incorporated
DMN2710UWQ-13
onsemi