DMP26M1UFG-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V POWERDI3333
$0.35
Available to order
Reference Price (USD)
1+
$0.35282
500+
$0.3492918
1000+
$0.3457636
1500+
$0.3422354
2000+
$0.3387072
2500+
$0.335179
Exquisite packaging
Discount
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Upgrade your designs with the DMP26M1UFG-7 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMP26M1UFG-7 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.67W (Ta), 3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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