DMS3014SFG-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 9.5A PWRDI3333-8
$0.59
Available to order
Reference Price (USD)
2,000+
$0.22155
Exquisite packaging
Discount
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Meet the DMS3014SFG-7 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMS3014SFG-7 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 10.4A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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