DMT10H009SCG-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V V-DFN3333
$0.42
Available to order
Reference Price (USD)
1+
$0.42335
500+
$0.4191165
1000+
$0.414883
1500+
$0.4106495
2000+
$0.406416
2500+
$0.4021825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT10H009SCG-13 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8 (Type B)
- Package / Case: 8-PowerVDFN
Related Products
Diodes Incorporated
DMT8030LFDF-13
Renesas Electronics America Inc
RJK03K0DPA-00#J5A
Diodes Incorporated
DMTH4007SPSQ-13
Goford Semiconductor
GT110N06S
Toshiba Semiconductor and Storage
2SK3798(STA4,Q,M)
Diodes Incorporated
DMP1011LFVQ-7
Infineon Technologies
IPF023N08NF2SATMA1
STMicroelectronics
STFU13N60M2
GeneSiC Semiconductor
G3R60MT07D
Renesas