GT110N06S
Goford Semiconductor
Goford Semiconductor
N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
$0.79
Available to order
Reference Price (USD)
1+
$0.79000
500+
$0.7821
1000+
$0.7742
1500+
$0.7663
2000+
$0.7584
2500+
$0.7505
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The GT110N06S single MOSFET from Goford Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the GT110N06S is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Toshiba Semiconductor and Storage
2SK3798(STA4,Q,M)
Diodes Incorporated
DMP1011LFVQ-7
Infineon Technologies
IPF023N08NF2SATMA1
STMicroelectronics
STFU13N60M2
GeneSiC Semiconductor
G3R60MT07D
Renesas
2SJ532-E
Infineon Technologies
IPW60R299CP
Renesas Electronics America Inc
RJJ0621DPP-00#T2
Nexperia USA Inc.
PMPB07R3ENAX
Microchip Technology