DMT10H009SCG-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V V-DFN3333
$0.42
Available to order
Reference Price (USD)
1+
$0.42335
500+
$0.4191165
1000+
$0.414883
1500+
$0.4106495
2000+
$0.406416
2500+
$0.4021825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the DMT10H009SCG-7 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMT10H009SCG-7 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8 (Type B)
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IPTG210N25NM3FDATMA1
Infineon Technologies
IPA083N10NM5SXKSA1
onsemi
NTP15N06AV
onsemi
NVTFWS027N10MCLTAG
IXYS
IXTY26P10T-TRL
onsemi
NVMYS1D6N04CLTWG
Diodes Incorporated
DMN7022LFG-7
Infineon Technologies
IAUC60N06S5N074ATMA1
Diodes Incorporated
DMT6002LPS-13
Diodes Incorporated