DMT12H065LFDF-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 115V 4.3A 6UDFN
$0.37
Available to order
Reference Price (USD)
1+
$0.37290
500+
$0.369171
1000+
$0.365442
1500+
$0.361713
2000+
$0.357984
2500+
$0.354255
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMT12H065LFDF-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMT12H065LFDF-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 115 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Vishay Siliconix
SI2308BDS-T1-BE3
Infineon Technologies
IPW50R280CE
Vishay Siliconix
SI4434ADY-T1-GE3
Infineon Technologies
IPS70R1K4P7SAKMA1
onsemi
FQD4N20TM
Vishay Siliconix
SIS444DN-T1-GE3
Diotec Semiconductor
DI070P04PQ-AQ
Panjit International Inc.
PJA3434_R1_00001
Sanken
GKI07301
onsemi