DMT15H017SK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 101V~250V TO252 T&
$0.80
Available to order
Reference Price (USD)
1+
$0.80490
500+
$0.796851
1000+
$0.788802
1500+
$0.780753
2000+
$0.772704
2500+
$0.764655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the DMT15H017SK3-13 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMT15H017SK3-13 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2344 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
2SK1419
Nexperia USA Inc.
BUK7275-100A,118
Fairchild Semiconductor
HUF76121D3ST
Renesas Electronics America Inc
NP160N055TUK-E1-AY
Rohm Semiconductor
RF4E070GNTR
Diodes Incorporated
ZVN4206GVTA
Alpha & Omega Semiconductor Inc.
AOT4N60
Infineon Technologies
IRFU024NPBF
Panjit International Inc.
PJD11N06A-AU_L2_000A1
Alpha & Omega Semiconductor Inc.