DMT3003LFG-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 22A PWRDI3333
$0.33
Available to order
Reference Price (USD)
3,000+
$0.35900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the DMT3003LFG-13 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMT3003LFG-13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
onsemi
NVTFS020N06CTAG
Panjit International Inc.
PJP5NA80_T0_00001
Renesas Electronics America Inc
2SK2595AXTB-E
Harris Corporation
IRF823
Diodes Incorporated
DMTH4002SCTB-13
onsemi
NTMFS5113PLT1G
STMicroelectronics
STU7N60DM2
Infineon Technologies
IPP60R040S7XKSA1
Rohm Semiconductor
R6004ENXC7G
Renesas Electronics America Inc