DMTH4002SCTB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V~40V TO263 T&R
$0.99
Available to order
Reference Price (USD)
1+
$0.98830
500+
$0.978417
1000+
$0.968534
1500+
$0.958651
2000+
$0.948768
2500+
$0.938885
Exquisite packaging
Discount
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The DMTH4002SCTB-13 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMTH4002SCTB-13 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB (D²PAK)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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