DMT3009LFVW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 12A PWRDI3333
$0.24
Available to order
Reference Price (USD)
3,000+
$0.27432
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT3009LFVW-13 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
Related Products
Rohm Semiconductor
R8002ANJGTL
NXP Semiconductors
PMPB20EN/S500X
Rohm Semiconductor
RSR025N05TL
Diodes Incorporated
DMP3008SFG-7
Toshiba Semiconductor and Storage
TK25V60X,LQ
Goford Semiconductor
G2312
Diodes Incorporated
DMP2010UFV-7
Diodes Incorporated
DMTH8008LPSQ-13
UnitedSiC
UJ4C075018K3S
Harris Corporation