DMT35M4LFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V U-DFN2020-
$0.19
Available to order
Reference Price (USD)
1+
$0.18857
500+
$0.1866843
1000+
$0.1847986
1500+
$0.1829129
2000+
$0.1810272
2500+
$0.1791415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT35M4LFDF-7 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMT35M4LFDF-7 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Diodes Incorporated
DMTH4004SPS-13
Renesas Electronics America Inc
RJK0659DPA-00#J5A
Diodes Incorporated
DMT10H032LFDF-13
Infineon Technologies
IPW65R022CFD7AXKSA1
Fairchild Semiconductor
FDMS8670AS
Infineon Technologies
IPD80N04S306BATMA1
Goford Semiconductor
G3401L
Diodes Incorporated
DMN2120UFCL-7
Micro Commercial Co
MCT04N10B-TP
Renesas Electronics America Inc