DMT35M4LFDF4-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V X2-DFN2020
$0.19
Available to order
Reference Price (USD)
1+
$0.19065
500+
$0.1887435
1000+
$0.186837
1500+
$0.1849305
2000+
$0.183024
2500+
$0.1811175
Exquisite packaging
Discount
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The DMT35M4LFDF4-13 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 910mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2020-6 (Type W)
- Package / Case: 6-PowerXDFN
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