DMT6030LFCL-7
Diodes Incorporated
        
                                Diodes Incorporated                            
                        
                                MOSFET BVDSS: 41V~60V X1-DFN1616                            
                        $0.16
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.15591
                                        500+
                                            $0.1543509
                                        1000+
                                            $0.1527918
                                        1500+
                                            $0.1512327
                                        2000+
                                            $0.1496736
                                        2500+
                                            $0.1481145
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                    Discover the DMT6030LFCL-7 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMT6030LFCL-7 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.                
            Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 780mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN1616-6 (Type K)
- Package / Case: 6-PowerUFDFN

