IPB65R155CFD7ATMA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW
$4.87
Available to order
Reference Price (USD)
1+
$4.87000
500+
$4.8213
1000+
$4.7726
1500+
$4.7239
2000+
$4.6752
2500+
$4.6265
Exquisite packaging
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Discover the IPB65R155CFD7ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPB65R155CFD7ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 77W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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