RX3G18BGNC16
Rohm Semiconductor
Rohm Semiconductor
NCH 40V 180A, TO-220AB, POWER MO
$6.90
Available to order
Reference Price (USD)
1+
$6.90000
500+
$6.831
1000+
$6.762
1500+
$6.693
2000+
$6.624
2500+
$6.555
Exquisite packaging
Discount
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Optimize your power electronics with the RX3G18BGNC16 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RX3G18BGNC16 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.64mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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