DMT67M8LCGQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 16A/64.6A 8DFN
$0.51
Available to order
Reference Price (USD)
1+
$0.50558
500+
$0.5005242
1000+
$0.4954684
1500+
$0.4904126
2000+
$0.4853568
2500+
$0.480301
Exquisite packaging
Discount
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Optimize your power electronics with the DMT67M8LCGQ-7 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMT67M8LCGQ-7 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 64.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8 (Type B)
- Package / Case: 8-PowerVDFN
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