DMT69M5LFVWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI333
$0.39
Available to order
Reference Price (USD)
1+
$0.39239
500+
$0.3884661
1000+
$0.3845422
1500+
$0.3806183
2000+
$0.3766944
2500+
$0.3727705
Exquisite packaging
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The DMT69M5LFVWQ-13 single MOSFET from Diodes Incorporated is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the DMT69M5LFVWQ-13 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 40.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.74W (Ta), 20.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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