NVMFWS003P03P8ZT1G
onsemi
onsemi
PFET SO8FL -30V 3MO
$1.06
Available to order
Reference Price (USD)
1+
$1.06067
500+
$1.0500633
1000+
$1.0394566
1500+
$1.0288499
2000+
$1.0182432
2500+
$1.0076365
Exquisite packaging
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The NVMFWS003P03P8ZT1G from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NVMFWS003P03P8ZT1G offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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