DMT8008LK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V TO252 T&R
$0.58
Available to order
Reference Price (USD)
1+
$0.58212
500+
$0.5762988
1000+
$0.5704776
1500+
$0.5646564
2000+
$0.5588352
2500+
$0.553014
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMT8008LK3-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMT8008LK3-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Nexperia USA Inc.
PSMNR70-40SSHJ
onsemi
FCPF190N60-F154
Infineon Technologies
BSC019N02KSGAUMA1
Infineon Technologies
IRLR2703TRPBF
Infineon Technologies
BSC040N08NS5ATMA1
Vishay Siliconix
IRFDC20PBF
Vishay Siliconix
SIHK045N60E-T1-GE3
STMicroelectronics
STF120NF10
Vishay Siliconix
SISS05DN-T1-GE3
Vishay Siliconix