DMTH43M8LFGQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V PWRDI3333
$1.26
Available to order
Reference Price (USD)
1+
$1.26000
500+
$1.2474
1000+
$1.2348
1500+
$1.2222
2000+
$1.2096
2500+
$1.197
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMTH43M8LFGQ-7 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMTH43M8LFGQ-7 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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