DMTH4M70SPGWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI808
$2.04
Available to order
Reference Price (USD)
1+
$2.04000
500+
$2.0196
1000+
$1.9992
1500+
$1.9788
2000+
$1.9584
2500+
$1.938
Exquisite packaging
Discount
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The DMTH4M70SPGWQ-13 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMTH4M70SPGWQ-13 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 5.6W (Ta), 428W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI8080-5
- Package / Case: SOT-1235
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