DMTH6002LPSW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI506
$1.06
Available to order
Reference Price (USD)
1+
$1.05840
500+
$1.047816
1000+
$1.037232
1500+
$1.026648
2000+
$1.016064
2500+
$1.00548
Exquisite packaging
Discount
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Upgrade your designs with the DMTH6002LPSW-13 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMTH6002LPSW-13 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8289 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (SWP)
- Package / Case: 8-PowerTDFN
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