ISC0603NLSATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-TDSON-8
$1.85
Available to order
Reference Price (USD)
1+
$1.85000
500+
$1.8315
1000+
$1.813
1500+
$1.7945
2000+
$1.776
2500+
$1.7575
Exquisite packaging
Discount
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Upgrade your designs with the ISC0603NLSATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the ISC0603NLSATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 24µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
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