DMTH6012LPSWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 11.5/50.5A PWRDI
$0.30
Available to order
Reference Price (USD)
1+
$0.30146
500+
$0.2984454
1000+
$0.2954308
1500+
$0.2924162
2000+
$0.2894016
2500+
$0.286387
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the DMTH6012LPSWQ-13 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMTH6012LPSWQ-13 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
- FET Feature: Standard
- Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type Q)
- Package / Case: 8-PowerTDFN
Related Products
Renesas Electronics America Inc
RJK0397DPA-02#J53
Renesas Electronics America Inc
2SK3511-S19-AY
Micro Commercial Co
MCB40P10Y-TP
onsemi
NDCTR08120A
Microchip Technology
APTM100DA18TG
Renesas Electronics America Inc
2SJ356(0)-T1-AY
Harris Corporation
RF1S45N06LESM9A
Diodes Incorporated
DMT2004UPS-13
Diodes Incorporated
DMN2310UW-7
Infineon Technologies