IPB65R099CFD7AATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 24A TO263-3
$8.48
Available to order
Reference Price (USD)
1+
$8.48000
500+
$8.3952
1000+
$8.3104
1500+
$8.2256
2000+
$8.1408
2500+
$8.056
Exquisite packaging
Discount
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Optimize your power electronics with the IPB65R099CFD7AATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPB65R099CFD7AATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 127W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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