DRA2523Y0L
Panasonic Electronic Components
Panasonic Electronic Components
TRANS PREBIAS PNP 200MW MINI3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.17512
6,000+
$0.16382
15,000+
$0.15252
30,000+
$0.15064
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, DRA2523Y0L offers unmatched convenience. Panasonic Electronic Components's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: MINI3-G3-B
Related Products
Toshiba Semiconductor and Storage
RN2103CT(TPL3)
Infineon Technologies
BCR 135 B6327
Rohm Semiconductor
DTC143ZUBHZGTL
Panasonic Electronic Components
DRC5124X0L
Fairchild Semiconductor
FJV4113RMTF
NXP USA Inc.
PDTD123EK,115
Panasonic Electronic Components
UNR92A3G0L
Panasonic Electronic Components
DRA3143Y0L
Panasonic Electronic Components
UNR422400A
Toshiba Semiconductor and Storage