Shopping cart

Subtotal: $0.00

DTC125TUAT106

Rohm Semiconductor
DTC125TUAT106 Preview
Rohm Semiconductor
TRANS PREBIAS NPN 200MW UMT3
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03315
6,000+
$0.02990
15,000+
$0.02600
30,000+
$0.02340
75,000+
$0.02080
150,000+
$0.01820
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Not For New Designs
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 200 kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3

Related Products

Nexperia USA Inc.

NHDTA123JTVL

Diodes Incorporated

DDTC115EE-7

Diodes Incorporated

DDTA123TUA-7-F

Diodes Incorporated

DDTD123TC-7-F

Nexperia USA Inc.

PDTA144EQBZ

Toshiba Semiconductor and Storage

RN1101MFV,L3XHF(CT

Nexperia USA Inc.

PDTC143XUF

Rohm Semiconductor

DTA143ZUBHZGTL

Nexperia USA Inc.

NHDTA124ETVL

Top