DXTP03200BP5Q-13
Diodes Incorporated
Diodes Incorporated
PWR HI VOLTAGE TRANSISTOR PDI5 T
$0.26
Available to order
Reference Price (USD)
1+
$0.26250
500+
$0.259875
1000+
$0.25725
1500+
$0.254625
2000+
$0.252
2500+
$0.249375
Exquisite packaging
Discount
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Experience unmatched performance with the DXTP03200BP5Q-13 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the DXTP03200BP5Q-13 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Power - Max: 740 mW
- Frequency - Transition: 105MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerDI™ 5
- Supplier Device Package: PowerDI™ 5
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