RJK2017DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$2.22
Available to order
Reference Price (USD)
1+
$2.22000
500+
$2.1978
1000+
$2.1756
1500+
$2.1534
2000+
$2.1312
2500+
$2.109
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJK2017DPE-00#J3 by Renesas Electronics America Inc is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Renesas Electronics America Inc for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Toshiba Semiconductor and Storage
TK4A80E,S4X
Micro Commercial Co
MCB90N12-TP
Micro Commercial Co
MSJU11N65A-TP
Harris Corporation
HUF76121S3
IXYS
MMIX1F160N30T
onsemi
NTMFS4C808NAT3G
Renesas Electronics America Inc
UPA1560H(3)-AZ
IXYS
IXFT16N120P-TRL
Rohm Semiconductor
R6015ENXC7G
Diodes Incorporated