EM6A9160TSC-4G
Etron Technology, Inc.
Etron Technology, Inc.
IC DRAM 128MBIT PAR 66TSOP II
$1.77
Available to order
Reference Price (USD)
1+
$1.76600
500+
$1.74834
1000+
$1.73068
1500+
$1.71302
2000+
$1.69536
2500+
$1.6777
Exquisite packaging
Discount
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The EM6A9160TSC-4G from Etron Technology, Inc. is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the EM6A9160TSC-4G ensures longevity and consistent performance in various environments.
Memory ICs like the EM6A9160TSC-4G are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the EM6A9160TSC-4G delivers unmatched reliability and efficiency.
The EM6A9160TSC-4G is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 250 MHz
- Write Cycle Time - Word, Page: 12ns
- Access Time: 700 ps
- Voltage - Supply: 2.3V ~ 2.7V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 66-TSSOP (0.400", 10.16mm Width)
- Supplier Device Package: 66-TSOP II
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