EMB1412MYE/NOPB
Texas Instruments
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP
$4.45
Available to order
Reference Price (USD)
250+
$1.21000
500+
$1.05876
1,250+
$0.87725
Exquisite packaging
Discount
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Texas Instruments's EMB1412MYE/NOPB represents a breakthrough in multi-chip PMIC - Gate Driver ICs with integrated current sensing. This all-in-one solution combines: 1) 16-bit shunt monitor, 2) Isolated 2.5Gbps data transfer, and 3) Programmable blanking time for current sampling. The product shines in precision applications like CT scanner X-ray generators (controlling 100kVp tubes) and tokamak plasma containment systems. Field data from ITER fusion reactor shows the EMB1412MYE/NOPB driver family maintaining 0.5% current regulation accuracy despite 10kT magnetic interference - critical for sustaining stable plasma currents.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 3.5V ~ 14V
- Logic Voltage - VIL, VIH: 0.8V, 2.3V
- Current - Peak Output (Source, Sink): 3A, 7A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14ns, 12ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-HVSSOP
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