EMH10FHAT2R
Rohm Semiconductor
Rohm Semiconductor
NPN+NPN DIGITAL TRANSISTOR (CORR
$0.34
Available to order
Reference Price (USD)
8,000+
$0.05200
Exquisite packaging
Discount
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The EMH10FHAT2R from Rohm Semiconductor is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the EMH10FHAT2R ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, Rohm Semiconductor's EMH10FHAT2R delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
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